Polycrystalline perovskite CH3NH3PbCl3/amorphous Ga2O3 hybrid structure for high-speed, low-dark current and self-powered UVA photodetector

•MAPbCl3 and amorphous Ga2O3 formed a hybrid structure for the first time.•The responsivity enhanced nearly 70 times by inserting the amorphous Ga2O3 layer.•The MAPbCl3/amorphous Ga2O3 photodetector is sensitive with high-detectivity.•The performance of polycrystalline detector is comparable to sing...

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Bibliographic Details
Published in:Journal of alloys and compounds 2022-01, Vol.890, p.161827, Article 161827
Main Authors: Liu, Shuo, Jiao, Shujie, Lu, Hongliang, Nie, Yiyin, Gao, Shiyong, Wang, Dongbo, Wang, Jinzhong, Zhao, Liancheng
Format: Article
Language:English
Subjects:
Amorphous Ga2O3
Amorphous semiconductors
Amorphous structure
Blood vessels
Dark current
Gallium oxides
Heterojunction
Heterojunctions
Hybrid structures
Perovskites
Photometers
Polycrystalline CH3NH3PbCl3
Polycrystals
Radiation
Single crystals
Surface roughness
UV filtering
UVA photodetector
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Summary:•MAPbCl3 and amorphous Ga2O3 formed a hybrid structure for the first time.•The responsivity enhanced nearly 70 times by inserting the amorphous Ga2O3 layer.•The MAPbCl3/amorphous Ga2O3 photodetector is sensitive with high-detectivity.•The performance of polycrystalline detector is comparable to single crystal device.•The detector is self-powered and realizes accurate detection of UVA radiation. [Display omitted] UVA radiation can survive from the absorption of atmospheric layer and reaches the terrestrial surface, which is harmful to human eyes, blood vessels, and elastic fibers. It is meaningful to detect the UVA radiation precisely. A sensitive, high-detectivity and self-powered UVA detector based on polycrystalline CH3NH3PbCl3/amorphous Ga2O3 hybrid structure is presented in this work. Under zero bias, the rise/decay time of the photodetector are 56/67 ms, and the detectivity reaches up to 5.4 × 1010 Jones. The performance is even superior to most of the reported devices based on CH3NH3PbCl3 single crystal. The heterojunction between amorphous Ga2O3 and CH3NH3PbCl3 accelerates the separation of photon-generated carrier and effectively reduces the recombination. In addition, the high resistivity and low surface roughness of the amorphous Ga2O3 layer also contribute to the improvement of device parameters. This study offers new insights to improve the polycrystalline MAPbCl3 devices by ultra-wide bandgap amorphous semiconductors.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2021.161827