High-performance inverted evanescently coupled waveguide integrated MUTC-PD with high response speed

Here we propose an inverted evanescently-coupled waveguide modified uni-traveling-carrier photodiode (IECWG MUTC-PD) and verify the character numerically. In this photodiode, the epitaxial structure is inverted from p-i-n to n-i-p, and a diluted waveguide is applied. The material of capacitance cont...

Full description

Saved in:
Bibliographic Details
Published in:Applied optics (2004) 2021-12, Vol.60 (34), p.10696
Main Authors: Wang, Fangli, Zhang, Bojian, Wang, Liang
Format: Article
Language:English
Subjects:
Capacitance
Depletion
Electric fields
Electromagnetic absorption
Energy bands
Photodiodes
Space charge
Waveguides
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Here we propose an inverted evanescently-coupled waveguide modified uni-traveling-carrier photodiode (IECWG MUTC-PD) and verify the character numerically. In this photodiode, the epitaxial structure is inverted from p-i-n to n-i-p, and a diluted waveguide is applied. The material of capacitance control layer is optimized to realize energy band compensation and capacitance control. Such structure possesses a large electric field in the whole depletion region and has a uniform light absorption, which improves the space charge effect. As a result, the PD achieves a 3-dB bandwidth of 71.9 GHz with a 35µ active area at -5 bias voltage and an internal responsivity of 0.59 A/W in 7-µm long short PD with a 200-nm-thick absorption layer.
ISSN:1559-128X
2155-3165
DOI:10.1364/AO.437921