Effects of Annealing Temperature on Structural and Optoelectronic Properties of Zr-doped ZnO Thin Films for Photosensors

We investigated the effects of the annealing temperature on the optoelectronic properties of Zr-doped ZnO (ZZO) thin films deposited on glass substrates by radio frequency sputtering and annealed at 200, 300, and 400 °C. It was found by X-ray diffraction analysis that all the deposited thin films ha...

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Bibliographic Details
Published in:Sensors and materials 2021-01, Vol.33 (11), p.3941
Main Authors: Yen, Ming-Yu, Chen, Tao-Hsing, Lai, Po-Hsun, Tu, Sheng-Lung, Shen, Yun-Hwei
Format: Article
Language:English
Subjects:
Annealing
Carrier density
Crystal structure
Electrical resistivity
Energy gap
Glass substrates
Grains
Optoelectronics
Thin films
Zinc oxide
Zirconium
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Summary:We investigated the effects of the annealing temperature on the optoelectronic properties of Zr-doped ZnO (ZZO) thin films deposited on glass substrates by radio frequency sputtering and annealed at 200, 300, and 400 °C. It was found by X-ray diffraction analysis that all the deposited thin films had a hexagonal crystal structure with polycrystalline grains oriented along the (0 0 2) direction. Furthermore, the film annealed at 400 ℃ had the lowest resistivity among the films due to the growth of grains, as well as the lowest resistivity of 1.5 × 10−2 Ω·cm, a mobility of 35 cm2V−1s−1, and a carrier concentration of 4.2 × 1019 cm−3. It also had a maximum transmittance of 95% and an energy gap of 3.2 eV. These results show that ZZO thin films subjected to annealing at 400 ℃ are promising for use as stable photosensors.
ISSN:0914-4935
2435-0869
DOI:10.18494/SAM.2021.3706