Layer number-dependent optoelectronic characteristics of quasi-2D PBA2(MAPbBr3)n−1PbBr4 perovskite films

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-12, Vol.9 (47), p.17033-17041
• Main Authors: Yao, Lianfei, Xue, Lou, Sui, Ning, Kang, Zhihui, Zhou, Qiang, Li, Li, Zhao, Bing, Han-zhuang, Zhang, Zhang, Jiaqi, Wang, Yinghui
• Format: Article
• Language: English
• Subjects: Light emitting diodes; Optoelectronics; Perovskites; Photoluminescence; Radiative lifetime; Spontaneous emission; Temperature dependence
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/d1tc03891e

Halide perovskites have attracted attention because of their potential in the fields of light-emitting diodes, lasers and detectors. Herein, a series of quasi-2D PBA2(MAPbBr3)n−1PbBr4 perovskite films have been synthesized and the physical behavior behind their optoelectronic properties, which is dependent on the layer number (n), has been discussed in detail. The temperature-dependent photoluminescence (PL) test indicates that the perovskite film with n = 7 has outstanding PL characteristics, owing to its long radiative lifetime at different temperatures. Temperature-dependent amplified spontaneous emission (ASE) has been employed for the first time to scan the ASE threshold of our films, showing that the ASE threshold decreases from 29.91 μJ cm−2 (3D perovskite film) to 19.23 μJ cm−2 (n = 3). The current–voltage test with strong light bias takes the lead in pointing out that the detector based on the 3D perovskite film (n = ∝) exhibits excellent opto-current properties in comparison with other quasi-2D perovskite films. Our results provide a comprehensive insight into the optoelectronic properties of these quasi-2D perovskite films.