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Bioinspired molecules design for bilateral synergistic passivation in buried interfaces of planar perovskite solar cells
Trap-mediated energy loss in the buried interface with non-exposed feature constitutes one of the serious challenges for achieving high-performance perovskite solar cells (PSCs). Inspired by the adhesion mechanism of mussels, herein, three catechol derivatives with functional Lewis base groups, name...
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Published in: | Nano research 2022-02, Vol.15 (2), p.1069-1078 |
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Main Authors: | , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Trap-mediated energy loss in the buried interface with non-exposed feature constitutes one of the serious challenges for achieving high-performance perovskite solar cells (PSCs). Inspired by the adhesion mechanism of mussels, herein, three catechol derivatives with functional Lewis base groups, namely 3,4-Dihydroxyphenylalanine (DOPA), 3,4-Dihydroxyphenethylamine (DA) and 3-(3,4-Dihydroxyphenyl) propionic acid (DPPA), were strategically designed. These molecules as interfacial linkers are incorporated into the buried interface between perovskite and SnO
2
surface, achieving bilateral synergetic passivation effect. The crosslinking can produce secondary bonding with the undercoordinated Pb
2+
and Sn
4+
exhibited the best performance and operational stability. Upon the DOPA passivation, a stabilized power conversion efficiency (PCE) of 21.5% was demonstrated for the planar PSCs. After 55 days of room-temperature storage, the unencapsulated devices with the DOPA crosslinker could still maintain 85% of their initial performance in air under relative humidity of ≈15%. This work opens up a new strategy for passivating the buried interfaces of perovskite photovoltaics and also provides important insights into designing defect passivation agents for other perovskite optoelectronic devices, such as light-emitting diodes, photodetectors, and lasers. |
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ISSN: | 1998-0124 1998-0000 |
DOI: | 10.1007/s12274-021-3600-z |