Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes (SWCNT-TFTs) is essential for further advances to improve the potential for various nanoelectronic applications. Herein, a comprehensive investigation of the two-dimensional (2...

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Bibliographic Details
Published in:Nano research 2022-02, Vol.15 (2), p.1524-1531
Main Authors: Shin, Hyeonwoo, Park, Sang-Joon, Kang, Byeong-Cheol, Ha, Tae-Jun
Format: Article
Language:English
Subjects:
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Carbon
Charge transport
Chemistry and Materials Science
Condensed Matter Physics
Crystals
Empirical equations
Materials Science
Nanomaterials
Nanotechnology
Nanotubes
Networks
Research Article
Semiconductor devices
Single wall carbon nanotubes
Temperature dependence
Thin film transistors
Thin films
Transient response
Transistors
Transport properties
Trapping
Two dimensional analysis
Velocity distribution
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Summary:Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes (SWCNT-TFTs) is essential for further advances to improve the potential for various nanoelectronic applications. Herein, a comprehensive investigation of the two-dimensional (2D) charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80–300 K. To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs, an empirical equation was derived from a theoretical trapping model, and a carrier velocity distribution was determined from the differentiation of the transient response. Furthermore, charge trapping and de-trapping in shallow- and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate. The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-021-3697-0