SnSe field-effect transistors with improved electrical properties

Low-symmetry two-dimensional (2D) materials, with unique in-plane direction-dependent optical, electrical, and thermoelectric properties, have been intensively studied for their potential application values in advanced electronic and optoelectronic devices. However, since anisotropic 2D materials ar...

Full description

Saved in:
Bibliographic Details
Published in:Nano research 2022-02, Vol.15 (2), p.1532-1537
Main Authors: Liu, Shuai, Chen, Yujia, Yang, Shengxue, Jiang, Chengbao
Format: Article
Language:English
Subjects:
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Boron
Boron nitride
Carrier mobility
Chemistry and Materials Science
Condensed Matter Physics
Electric contacts
Electrical properties
Electronic devices
Electronic equipment
Environmental factors
Field effect transistors
Graphene
Heterostructures
Materials Science
Nanotechnology
Optical properties
Optoelectronic devices
Research Article
Semiconductor devices
Symmetry
Transistors
Two dimensional materials
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Low-symmetry two-dimensional (2D) materials, with unique in-plane direction-dependent optical, electrical, and thermoelectric properties, have been intensively studied for their potential application values in advanced electronic and optoelectronic devices. However, since anisotropic 2D materials are highly sensitive to the environmental factors, researches on their high-performance field-effect transistors (FETs) are still limited. Here, we report a high-performance SnSe FET based on a van der Waals (vdWs) heterostructure of SnSe encapsulated in hexagonal boron nitride ( h BN) together with graphene contacts. The device exhibits a high on/off ratio exceeding 1 × 10 9 , and a carrier mobility of 118 cm 2 ·V −1 ·s −1 . Our work highlights low-symmetry 2D SnSe holds potential to be used for designing excellent electronic devices.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-021-3698-z