Deposition of oxide nanostructures by nanosecond laser ablation of silicon in an oxygen-containing background gas

The nanosecond laser ablation technique was used to synthesize thin silicon oxide films of various stoichiometry in vacuum and in a background gas. The local oxidation degree of specimens was evaluated using three different characterization methods. It was found that, on increasing the distance to t...

Full description

Saved in:
Bibliographic Details
Published in:Thermophysics and aeromechanics 2021-07, Vol.28 (4), p.549-554
Main Authors: Rodionov, A. A., Starinskiy, S. V., Shukhov, Yu. G., Bulgakov, A. V.
Format: Article
Language:English
Subjects:
Ablation
Gas pressure
Inhomogeneity
Laser ablation
Lasers
Oxidation
Oxide coatings
Oxygen content
Physics
Physics and Astronomy
Reversed flow
Silicon oxides
Stoichiometry
Thermodynamics
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The nanosecond laser ablation technique was used to synthesize thin silicon oxide films of various stoichiometry in vacuum and in a background gas. The local oxidation degree of specimens was evaluated using three different characterization methods. It was found that, on increasing the distance to the laser-plume axis, there occurred a monotonic increase in the oxygen content of the films due to their oxidation inhomogeneity. A profound decrease in ablated mass, related to an increased reverse flow of substance to the target, was found to occur when the pressure of the ambient mixture was increased from 20 to 60 Pa. A comparison was made of the oxidation efficiencies of the films heated at the stage of their synthesis and at the stage of annealing of already formed films. It is shown that the composition of the films could be controlled by varying the inert-gas pressure at the constant pressure of the chemically active component in ambient mixture.
ISSN:0869-8643
1531-8699
DOI:10.1134/S0869864321040089