Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics

Pulsed laser annealing (PLA, 527 nm, 200-ns pulse, Nd:YLF laser) was used to activate phosphorous-implanted C-face SiC and repair lattice damage. The electrical and structural characteristics of the implanted material surface were analyzed before and after PLA. Electrical activation was confirmed by...

Full description

Saved in:
Bibliographic Details
Published in:Journal of electronic materials 2022, Vol.51 (1), p.172-178
Main Authors: Wu, Jingmin, He, Zhi, Guo, Zhiyu, Tian, Run, Wang, Fengxuan, Liu, Min, Yang, Xiang, Fan, Zhongchao, Yang, Fuhua
Format: Article
Language:English
Subjects:
Annealing
Characterization and Evaluation of Materials
Chemistry and Materials Science
Diffraction patterns
Electronics and Microelectronics
Instrumentation
Laser beam annealing
Laser damage
Lasers
Materials Science
Neodymium lasers
Optical and Electronic Materials
Original Research Article
Pulsed lasers
Solid State Physics
Transmission electron microscopy
YLF lasers
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Pulsed laser annealing (PLA, 527 nm, 200-ns pulse, Nd:YLF laser) was used to activate phosphorous-implanted C-face SiC and repair lattice damage. The electrical and structural characteristics of the implanted material surface were analyzed before and after PLA. Electrical activation was confirmed by the circular transfer length method. The implanted layer was characterized by x-ray diffraction. The change in strain can be attributed to the recovery of lattice damage induced by laser annealing. Transmission electron microscopy (TEM) showed that amorphous 4H-SiC structure was transformed to crystalline structure by PLA. The defect evolution was investigated using TEM images and diffraction patterns.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-021-09263-2