MCdCl3 (M=CH3NH3, (CH3)2NH2): New Hybrid Perovskites with Large Dielectric Constants for Field‐Effect Transistors

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2021-12, Vol.218 (24), p.n/a
• Main Authors: Kalthoum, Raghda, Ben Bechir, Mohamed, Ben Rhaiem, Abdallah, Gargouri, Mohamed
• Format: Article
• Language: English
• Subjects: active channels; Capacitance; dielectric constants; dielectric gates; Dielectric loss; Dielectric properties; Electrical resistivity; Excitons; Field effect transistors; Frequency ranges; high permittivity; Metal halides; Optoelectronic devices; Permittivity; Perovskites; Semiconductor devices; Single crystals; Transistors
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202100485

Organic–inorganic metal halide hybrid perovskites (OIHPs) have recently noticed a tremendous number of applications in the field of optoelectronics by virtue of such outstanding dielectric properties as the large dielectric constant, the good electrical conductivity, the high capacitance, the low dielectric loss, as well as the low exciton binding energy and the trap density. These are important parameters that enhance the performance of many optoelectronic devices, notably, the components of field‐effect transistors (FETs). Herein, the dielectric investigation of the following single crystals  CH 3 NH 3 Cd Cl 3 (1) and ( CH 3 ) 2 NH 2 Cd Cl 3 ( 2 ) in large frequency ranges and at different temperatures is mainly focused on. This article draws a comparison between the dielectric performances of the prepared perovskites 1 and 2 and the previously reported results, which shows that these materials exhibit large dielectric constants (103) at low frequencies, leading to structural fluctuations and slow‐moving ions. In addition, the high electrical conductivity (≈2. 10 − 4  S m − 1 ), the low dielectric loss (< 0.1) at high frequencies, and the high capacitance (≈5 10 − 11  F  m − 2 ) demonstrate the superior dielectric potential of these promising perovskites in FET technologies. These compounds which have multifunctional roles in new transistor devices can be used as dielectric gates due to their high permittivity. The prepared perovskites  CH 3 NH 3 Cd Cl 3 (1) and ( CH 3 ) 2 NH 2 Cd Cl 3 ( 2 ) exhibit a highly crystalline nature with a pure chemical composition. Compared with other dielectric materials, the large dielectric permittivity, the good capacitance, the high conductivity, and the low dielectric loss of materials 1 and 2 make them particularly more tunable for field‐effect transistor (FET) applications.