Sn-assisted growth of Ga(In)AsP nanowires from vapor phase in a quasi-closed volume

We have shown the possibility of Ga(In)AsP on GaAs (100) nanowire growth in a quasi-closed volume from the vapour phase witn the use of Sn catalyst. We have investigated the dynamics of nanowire formation depending on the growth time at constant V/III ratio given by the process temperature. It is sh...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-12, Vol.1697 (1), p.12109
Main Authors: Karlina, L B, Vlasov, A S, Smirnova, I P, Soshnikov, I P
Format: Article
Language:English
Subjects:
Nanowires
Physics
Raman spectra
Vapor phases
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Summary:We have shown the possibility of Ga(In)AsP on GaAs (100) nanowire growth in a quasi-closed volume from the vapour phase witn the use of Sn catalyst. We have investigated the dynamics of nanowire formation depending on the growth time at constant V/III ratio given by the process temperature. It is shown that growth of free-standing nanowires is realized through the vapor-liquid-solid mechanism. Based on the Raman scattering data sequential growth of two phases have been shown. Phosphorous concentration in free-stamding nanowires was estimated to be high.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1697/1/012109