UV-Enabled Multibit Organic Transistor Memory With High Controllability and Stability

An organic field-effect transistor nonvolatile memory with multibit storage capability and selective UV response was demonstrated, which showed good retention for all the memory states. The programming/erasing of the device operating at a low voltage was enabled by solar-blind UV light of 254 nm, an...

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Bibliographic Details
Published in:IEEE electron device letters 2022-01, Vol.43 (1), p.124-127
Main Authors: Zhang, Zhong-Da, Gao, Xu, Luo, Jie, Zhong, Ya-Nan, Xu, Jian-Long, Wang, Sui-Dong
Format: Article
Language:English
Subjects:
Control stability
Field effect transistors
Lighting
Logic gates
Low voltage
multibit memory
Nonvolatile memory
OFETs
Organic field-effect transistors
Pentacene
polymer electret
Polymers
Programming
Semiconductor devices
Transistors
Ultraviolet radiation
UV programming
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Summary:An organic field-effect transistor nonvolatile memory with multibit storage capability and selective UV response was demonstrated, which showed good retention for all the memory states. The programming/erasing of the device operating at a low voltage was enabled by solar-blind UV light of 254 nm, and it had no response to 365 nm UV light and visible light. The stepwise switching between the memory states was controlled only by the number of the programming/erasing pulses, rather than by programming/erasing voltage or duration. The multibit memory feature is ascribed to the cumulative and reversible charge trapping in the employed polymer electret layer, and this architecture may offer a promising approach to multibit organic-based memories.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3132996