Loading…
Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature
We present capacitance–voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski–Krastanov growth method. The internal electric fields present in GaN and its alloys...
Saved in:
| Published in: | Applied physics letters 2022-01, Vol.120 (1) |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | |
|---|---|
| cites | cdi_FETCH-LOGICAL-c356t-2d49c68a6a0ac55e9a0c8cca5cac160387f5f0005f840bc773322e08195736f03 |
| container_end_page | |
| container_issue | 1 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 120 |
| creator | Sgroi, C. A. Brault, J. Duboz, J.-Y. Chenot, S. Vennéguès, P. Ludwig, A. Wieck, A. D. |
| description | We present capacitance–voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski–Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this material system an ideal candidate for high-temperature quantum applications. Charges and the internal electric fields influence the energy spacing in the QDs. We correlate photoluminescence measurements with C(V) measurements and show single-electron charging of the QDs and a Coulomb blockade energy of around 60 meV at room temperature. This finding demonstrates the possibility of quantum applications at room temperature. |
| doi_str_mv | 10.1063/5.0073864 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_proquest_journals_2617081229</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2617081229</sourcerecordid><originalsourceid>FETCH-LOGICAL-c356t-2d49c68a6a0ac55e9a0c8cca5cac160387f5f0005f840bc773322e08195736f03</originalsourceid><addsrcrecordid>eNp9kE1LAzEURYMoWKsL_0HAlcLUZNJ8jDsp2gpFN3VreM0ktnWmaZNMxX_vlJZ2Ibh63MfhcLkIXVPSo0Swe94jRDIl-ieoQ4mUGaNUnaIOIYRlouD0HF3EuGgjzxnroI-BbypfT_G08uYLSvuAJ_4bQonNDMKnxcYvU_AV9g5HW7kMYrT1tLIlHsIrXjewTE2NS58ihoSD9zVOtl7ZAKkJ9hKdOaiivdrfLnp_fpoMRtn4bfgyeBxnhnGRsrzsF0YoEEDAcG4LIEYZA9yAoYIwJR13285O9cnUSMlYnluiaMElE46wLrrdeWdQ6VWY1xB-tIe5Hj2O9fZHmFR9qeSGtuzNjl0Fv25sTHrhm7Bs6-lcUNla87w4Gk3wMQbrDlpK9HZqzfV-6pa927HRzBOkuV8e4I0PR1CvSvcf_Nf8C75viyc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2617081229</pqid></control><display><type>article</type><title>Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP Journals (American Institute of Physics)</source><creator>Sgroi, C. A. ; Brault, J. ; Duboz, J.-Y. ; Chenot, S. ; Vennéguès, P. ; Ludwig, A. ; Wieck, A. D.</creator><creatorcontrib>Sgroi, C. A. ; Brault, J. ; Duboz, J.-Y. ; Chenot, S. ; Vennéguès, P. ; Ludwig, A. ; Wieck, A. D.</creatorcontrib><description>We present capacitance–voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski–Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this material system an ideal candidate for high-temperature quantum applications. Charges and the internal electric fields influence the energy spacing in the QDs. We correlate photoluminescence measurements with C(V) measurements and show single-electron charging of the QDs and a Coulomb blockade energy of around 60 meV at room temperature. This finding demonstrates the possibility of quantum applications at room temperature.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0073864</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Condensed Matter ; Electric fields ; Epitaxial growth ; Gallium nitrides ; High temperature ; Materials Science ; Molecular beam epitaxy ; Molecular structure ; Photoluminescence ; Physics ; Quantum dots ; Room temperature ; Self-assembly ; Single electrons ; Wurtzite</subject><ispartof>Applied physics letters, 2022-01, Vol.120 (1)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c356t-2d49c68a6a0ac55e9a0c8cca5cac160387f5f0005f840bc773322e08195736f03</cites><orcidid>0000-0003-2010-6796 ; 0000-0001-9776-2922 ; 0000-0002-2871-7789 ; 0000-0002-1587-8452 ; 0000-0001-5112-620X ; 0000-0003-0236-4003</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0073864$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27923,27924,76254</link.rule.ids><backlink>$$Uhttps://cnrs.hal.science/hal-03784787$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Sgroi, C. A.</creatorcontrib><creatorcontrib>Brault, J.</creatorcontrib><creatorcontrib>Duboz, J.-Y.</creatorcontrib><creatorcontrib>Chenot, S.</creatorcontrib><creatorcontrib>Vennéguès, P.</creatorcontrib><creatorcontrib>Ludwig, A.</creatorcontrib><creatorcontrib>Wieck, A. D.</creatorcontrib><title>Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature</title><title>Applied physics letters</title><description>We present capacitance–voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski–Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this material system an ideal candidate for high-temperature quantum applications. Charges and the internal electric fields influence the energy spacing in the QDs. We correlate photoluminescence measurements with C(V) measurements and show single-electron charging of the QDs and a Coulomb blockade energy of around 60 meV at room temperature. This finding demonstrates the possibility of quantum applications at room temperature.</description><subject>Applied physics</subject><subject>Condensed Matter</subject><subject>Electric fields</subject><subject>Epitaxial growth</subject><subject>Gallium nitrides</subject><subject>High temperature</subject><subject>Materials Science</subject><subject>Molecular beam epitaxy</subject><subject>Molecular structure</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quantum dots</subject><subject>Room temperature</subject><subject>Self-assembly</subject><subject>Single electrons</subject><subject>Wurtzite</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEURYMoWKsL_0HAlcLUZNJ8jDsp2gpFN3VreM0ktnWmaZNMxX_vlJZ2Ibh63MfhcLkIXVPSo0Swe94jRDIl-ieoQ4mUGaNUnaIOIYRlouD0HF3EuGgjzxnroI-BbypfT_G08uYLSvuAJ_4bQonNDMKnxcYvU_AV9g5HW7kMYrT1tLIlHsIrXjewTE2NS58ihoSD9zVOtl7ZAKkJ9hKdOaiivdrfLnp_fpoMRtn4bfgyeBxnhnGRsrzsF0YoEEDAcG4LIEYZA9yAoYIwJR13285O9cnUSMlYnluiaMElE46wLrrdeWdQ6VWY1xB-tIe5Hj2O9fZHmFR9qeSGtuzNjl0Fv25sTHrhm7Bs6-lcUNla87w4Gk3wMQbrDlpK9HZqzfV-6pa927HRzBOkuV8e4I0PR1CvSvcf_Nf8C75viyc</recordid><startdate>20220103</startdate><enddate>20220103</enddate><creator>Sgroi, C. A.</creator><creator>Brault, J.</creator><creator>Duboz, J.-Y.</creator><creator>Chenot, S.</creator><creator>Vennéguès, P.</creator><creator>Ludwig, A.</creator><creator>Wieck, A. D.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-2010-6796</orcidid><orcidid>https://orcid.org/0000-0001-9776-2922</orcidid><orcidid>https://orcid.org/0000-0002-2871-7789</orcidid><orcidid>https://orcid.org/0000-0002-1587-8452</orcidid><orcidid>https://orcid.org/0000-0001-5112-620X</orcidid><orcidid>https://orcid.org/0000-0003-0236-4003</orcidid></search><sort><creationdate>20220103</creationdate><title>Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature</title><author>Sgroi, C. A. ; Brault, J. ; Duboz, J.-Y. ; Chenot, S. ; Vennéguès, P. ; Ludwig, A. ; Wieck, A. D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-2d49c68a6a0ac55e9a0c8cca5cac160387f5f0005f840bc773322e08195736f03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Condensed Matter</topic><topic>Electric fields</topic><topic>Epitaxial growth</topic><topic>Gallium nitrides</topic><topic>High temperature</topic><topic>Materials Science</topic><topic>Molecular beam epitaxy</topic><topic>Molecular structure</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Quantum dots</topic><topic>Room temperature</topic><topic>Self-assembly</topic><topic>Single electrons</topic><topic>Wurtzite</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sgroi, C. A.</creatorcontrib><creatorcontrib>Brault, J.</creatorcontrib><creatorcontrib>Duboz, J.-Y.</creatorcontrib><creatorcontrib>Chenot, S.</creatorcontrib><creatorcontrib>Vennéguès, P.</creatorcontrib><creatorcontrib>Ludwig, A.</creatorcontrib><creatorcontrib>Wieck, A. D.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sgroi, C. A.</au><au>Brault, J.</au><au>Duboz, J.-Y.</au><au>Chenot, S.</au><au>Vennéguès, P.</au><au>Ludwig, A.</au><au>Wieck, A. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature</atitle><jtitle>Applied physics letters</jtitle><date>2022-01-03</date><risdate>2022</risdate><volume>120</volume><issue>1</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We present capacitance–voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski–Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this material system an ideal candidate for high-temperature quantum applications. Charges and the internal electric fields influence the energy spacing in the QDs. We correlate photoluminescence measurements with C(V) measurements and show single-electron charging of the QDs and a Coulomb blockade energy of around 60 meV at room temperature. This finding demonstrates the possibility of quantum applications at room temperature.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0073864</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-2010-6796</orcidid><orcidid>https://orcid.org/0000-0001-9776-2922</orcidid><orcidid>https://orcid.org/0000-0002-2871-7789</orcidid><orcidid>https://orcid.org/0000-0002-1587-8452</orcidid><orcidid>https://orcid.org/0000-0001-5112-620X</orcidid><orcidid>https://orcid.org/0000-0003-0236-4003</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2022-01, Vol.120 (1) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_journals_2617081229 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics) |
| subjects | Applied physics Condensed Matter Electric fields Epitaxial growth Gallium nitrides High temperature Materials Science Molecular beam epitaxy Molecular structure Photoluminescence Physics Quantum dots Room temperature Self-assembly Single electrons Wurtzite |
| title | Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T05%3A59%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Coulomb%20blockade:%20Toward%20charge%20control%20of%20self-assembled%20GaN%20quantum%20dots%20at%20room%20temperature&rft.jtitle=Applied%20physics%20letters&rft.au=Sgroi,%20C.%20A.&rft.date=2022-01-03&rft.volume=120&rft.issue=1&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0073864&rft_dat=%3Cproquest_hal_p%3E2617081229%3C/proquest_hal_p%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c356t-2d49c68a6a0ac55e9a0c8cca5cac160387f5f0005f840bc773322e08195736f03%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2617081229&rft_id=info:pmid/&rfr_iscdi=true |