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Novel conversion annealing pretreatment for improved deposition of diamond coatings onto WC-Co cemented carbide
•Changing the surface microstructure of hard metal YG6 by conversion annealing.•Adjusting the constituent phases of conversion layer to be Co3W and WC.•Encapsulating γ-Co(W) transformed from Co3W during HFCVD initiation stage.•Depositing diamond coating with adhesion HF 2–3 onto YG6 without chemical...
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Published in: | Journal of alloys and compounds 2022-02, Vol.893, p.162325, Article 162325 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •Changing the surface microstructure of hard metal YG6 by conversion annealing.•Adjusting the constituent phases of conversion layer to be Co3W and WC.•Encapsulating γ-Co(W) transformed from Co3W during HFCVD initiation stage.•Depositing diamond coating with adhesion HF 2–3 onto YG6 without chemical etching.
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To maintain the substrate strength and toughness of WC-Co cemented carbide as well as improve its adhesion with a diamond coating deposited by hot filament chemical vapor deposition (HFCVD), a novel conversion annealing pretreatment was studied. The pretreated substrates, as-nucleated, and as-grown diamond coating specimens were characterized using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Rockwell hardness tests. It was found that conversion treatment could effectively convert the Co in the surface layer into intermetallic (Co3W, Co7W) and/or Co-rich compound (M6C, M12C) phases. The conversion layer underwent a re-carburization process during the nucleation stage of HFCVD. The intermetallic phases returned to the γ-Co (W) phase which will be encapsulated by the freshly formed WC layer. This is beneficial for seeding growth and new diamond nuclei formation. However, those Co-rich carbides consumed much carbon atoms to decompose and react to form a lot of free γ-Co phase during the nucleation stage, which promoted severe graphitization at the growth interface during HFCVD, and caused the film to peel off. A high-quality microscale diamond coating with an adhesion of the HF 2–3 level could be deposited onto the conversion layer with only the WC and Co3W phases. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2021.162325 |