Efficiency of Injecting Radiation Defects during Irradiation of Silicon n+–p Structures with Fast Electrons

The results of an experimental study of the formation of recombination radiation-defect sites in n + – p silicon structures during irradiation with high-energy electrons have been presented. It has been shown that zinc doping into p -Si to a number density comparable to boron does not change the lif...

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Bibliographic Details
Published in:Applied solar energy 2021-05, Vol.57 (3), p.188-191
Main Authors: Tashmetov, M. Yu, Makhkamov, Sh, Sattiev, A. R., Erdonov, M. N., Kholmedov, Kh. M.
Format: Article
Language:English
Subjects:
Boron
Current carriers
Density
Direct Conversion of Solar Energy into Electrical Energy
Electrical Machines and Networks
Engineering
High energy electrons
Impurities
Irradiation
Power Electronics
Radiation
Radiation damage
Recombination
Silicon
Solar energy
Zinc
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Summary:The results of an experimental study of the formation of recombination radiation-defect sites in n + – p silicon structures during irradiation with high-energy electrons have been presented. It has been shown that zinc doping into p -Si to a number density comparable to boron does not change the lifetime of minority charge carriers (τ). It has been found that an increase in the zinc number density to 6 × 10 14 cm –3 in doped n + – p structures leads to a decrease in the radiation damage coefficients of τ by a factor more than 3. A mechanism explaining the effect of Zn impurities on the process of radiation defect formation in silicon structures has been proposed.
ISSN:0003-701X
1934-9424
DOI:10.3103/S0003701X21030099