Impact of argon ion implantation on CdS nanorod mesh

•180 keV Ar+ ions are implanted on chemically deposited CdS nanorod mesh.•Hexagonal phase remains consistent after implantation.•Optical band gap energy gradually decrease with the implantation dose.•Green-yellow-red emission is addressed in the photoluminescence spectra. Ion implantation is explore...

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Bibliographic Details
Published in:Materials letters 2022-01, Vol.307, p.131082, Article 131082
Main Authors: Khatter, Jaya, Chauhan, R.P.
Format: Article
Language:English
Subjects:
Argon ions
Cadmium sulfide
CBD
CdS nanorod mesh
Chemical synthesis
Energy gap
Field emission microscopy
Hexagonal phase
Implantation
Ion implantation
Materials science
Nanorods
Optical properties
Photoluminescence
Thin films
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Summary:•180 keV Ar+ ions are implanted on chemically deposited CdS nanorod mesh.•Hexagonal phase remains consistent after implantation.•Optical band gap energy gradually decrease with the implantation dose.•Green-yellow-red emission is addressed in the photoluminescence spectra. Ion implantation is explored as potent approach for tuning the optoelectrical properties of semiconducting thin films via controlled defect engineering. This present study investigates the 180 keV argon (Ar+) ion implantation on the cadmium sulfide (CdS) nanorod mesh; synthesized via chemical bath deposition (CBD) method. X-ray diffraction (XRD) analysis supports the consistency of hexagonal phase even after implantation, but variation in the intensity of diffraction planes is noted. Field emission scanning electron microscopy (FESEM) scans are recorded to examine the implantation effect on the surface morphology. Implantation induces lattice disorder that resulted decrease in band gap energy from 2.39 eV to 2.08 eV and the corresponding green-yellow-red emission bands are discussed in photoluminescence (PL) spectra.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2021.131082