Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating rates

Several thermal parameters were analyzed for nanocrystalline silicon carbide (3C-SiC) particles at the performed depending on the thermal processing rate. The hydroxyl groups on the surface of nanocrystalline 3C-SiC particles have been investigated as a function of temperature and heating rate. Spec...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2022-02, Vol.128 (2), Article 115
Main Authors: Huseynov, Elchin M., Naghiyev, Tural G.
Format: Article
Language:English
Subjects:
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Enthalpy
Heating rate
Hydroxyl groups
Machines
Manufacturing
Materials science
Mathematical analysis
Nanocrystals
Nanoparticles
Nanotechnology
Optical and Electronic Materials
Parameters
Physics
Physics and Astronomy
Processes
Silicon carbide
Surfaces and Interfaces
Thermodynamic properties
Thin Films
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Summary:Several thermal parameters were analyzed for nanocrystalline silicon carbide (3C-SiC) particles at the performed depending on the thermal processing rate. The hydroxyl groups on the surface of nanocrystalline 3C-SiC particles have been investigated as a function of temperature and heating rate. Specific heat capacity and Gibbs energy of silicon carbide nanoparticles have been determined in the temperature range of 300–1270 K at various heating rates. The enthalpy and the entropy were calculated at different thermal processing rates (theoretical calculations are confirmed based on experimental results). Experimental results obtained for all thermophysical parameters were comparatively studied at different thermal processing rates.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-05265-x