Magnetoresistance and magnetoimpedance in holmium manganese sulfides

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2022-02, Vol.128 (2), Article 124
• Main Authors: Romanova, O. B., Aplesnin, S. S., Sitnikov, M. N., Udod, L. V., Kharkov, A. M.
• Format: Article
• Language: English
• Subjects: Applied physics; Characterization and Evaluation of Materials; Condensed Matter Physics; Electric polarization; Hodographs; Holmium; Machines; Magnetic fields; Magnetoimpedance; Magnetoresistance; Magnetoresistivity; Manganese; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Phase transitions; Physics; Physics and Astronomy; Processes; Relaxation time; Sulfides; Surfaces and Interfaces; Thin Films; Transport properties
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-021-05198-x

The structure, transport characteristics, real and imaginary parts of the impedance components and electric polarization of the Ho X Mn 1− X S ( X  = 0.1 and 0.2) system have been investigated in the temperature range of 80‒500 K in magnetic fields of up to 12 kOe. The morphology of synthesized samples has been studied. The influence of the magnetic field on the transport characteristics, on both direct and alternating currents of holmium manganese sulfides, have been established. The negative effects of DC magnetoresistance in the region of the magnetic phase transition and positive AC magnetoimpedance up to 4% in the paramagnetic region have been established. The critical temperatures of the existence of the electric polarization have been determined. At a substitution concentration of X  = 0.1, the activation character of the relaxation time versus temperature has been found. The diffusion contribution for the composition with X  = 0.2 has been established by the impedance hodograph.