A 4 kV/120 A SiC Solid-State DC Circuit Breaker Powered By a Load-Independent IPT System

This article introduces a 4 kV/120 A solid-state dc circuit breaker (DCCB) based on discrete SiC mosfet s. The DCCB is designed in a five-layer tower structure. Each layer consists of a circular main conduction branch and an attached gate driver. There are two primary benefits of the proposed DCCB....

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Bibliographic Details
Published in:IEEE transactions on industry applications 2022-01, Vol.58 (1), p.1115-1125
Main Authors: Zhao, Shuyan, Dongye, Zhonghao, Wang, Yao, Zan, Xin, Zhang, Hua, Zheng, Sheng, Lu, Xiaonan, Avestruz, Al-Thaddeus, Lu, Fei
Format: Article
Language:English
Subjects:
Circuit breakers
Conduction losses
DC circuit breaker
DC circuit breaker (DCCB)
ENGINEERING
inductive power transfer
inductive power transfer (IPT)
Load fluctuation
load-independent
Logic gates
Magnetic resonance
MOSFET
multiple loads
Network topology
Power transfer
Prototypes
Receivers
Relays
Solid state
Topology
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Summary:This article introduces a 4 kV/120 A solid-state dc circuit breaker (DCCB) based on discrete SiC mosfet s. The DCCB is designed in a five-layer tower structure. Each layer consists of a circular main conduction branch and an attached gate driver. There are two primary benefits of the proposed DCCB. First, it reduces conduction loss with multiple devices in parallel. Second, it achieves an ultrafast response speed with SiC mosfet s. Moreover, the gate drivers of the DCCB are powered by a domino inductive power transfer (IPT) system. It achieves the load-independent constant-voltage output characteristics, which means the outputs are immune to load variations. An IPT system prototype is implemented to test the power transfer performance. At 500-kHz frequency, the total output power reaches 15.73 W, which is sufficient to power on five gate drivers, with a peak transfer efficiency of 75.4%. The IPT system is tested to power a 4 kV/120 A DCCB prototype. It validates that the DCCB is effective to turn off 120 A current within 3.5 μ s.
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.2021.3084130