Highly efficient hybrid light-emitting transistors incorporating MoOx/Ag/MoOx semi-transparent electrodes

Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic–inorganic hybrid LETs (HLETs) have recently shown excellent characterist...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-01, Vol.10 (3), p.880-885
Main Authors: Yu Jung Park, Song, Ae Ran, Chung, Kwun-Bum, Kim, Tae-Youb, Walker, Bright, Seo, Jung Hwa
Format: Article
Language:English
Subjects:
Brightness
Electrodes
Electron mobility
Optical properties
Optoelectronic devices
Quantum efficiency
Semiconductor devices
Thickness
Threshold voltage
Transistors
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Summary:Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic–inorganic hybrid LETs (HLETs) have recently shown excellent characteristics in this context, including very low threshold voltage (
ISSN:2050-7526
2050-7534
DOI:10.1039/d1tc04674h