Highly efficient hybrid light-emitting transistors incorporating MoOx/Ag/MoOx semi-transparent electrodes

Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic–inorganic hybrid LETs (HLETs) have recently shown excellent characterist...

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Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-01, Vol.10 (3), p.880-885
Main Authors: Yu Jung Park, Song, Ae Ran, Chung, Kwun-Bum, Kim, Tae-Youb, Walker, Bright, Seo, Jung Hwa
Format: Article
Language:English
Subjects:
Brightness
Electrodes
Electron mobility
Optical properties
Optoelectronic devices
Quantum efficiency
Semiconductor devices
Thickness
Threshold voltage
Transistors
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container_title Journal of materials chemistry. C, Materials for optical and electronic devices
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creator Yu Jung Park
Song, Ae Ran
Chung, Kwun-Bum
Kim, Tae-Youb
Walker, Bright
Seo, Jung Hwa
description Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic–inorganic hybrid LETs (HLETs) have recently shown excellent characteristics in this context, including very low threshold voltage (
doi_str_mv 10.1039/d1tc04674h
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2621380934</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2621380934</sourcerecordid><originalsourceid>FETCH-LOGICAL-p183t-67410d181f21939552688e7fab986a1ac83434ac0d9d6d535be353db03d0c1e73</originalsourceid><addsrcrecordid>eNo9jkFPwzAMhSMEEtPYhV8QiXNp3DRpcpwmYEhDu8B5SpO0y1SakmQS-_dkA-HLs57tzw-heyCPQKgsDSRNat7U-ys0qwgjRcNoff3fV_wWLWI8kFwCuOByhtza9fvhhG3XOe3smPD-1AZn8JD9VNhPl5Ibe5yCGqOLyYeI3ah9mHxQl8mb336Xy748K475oLjsTiqcaXawOgVvbLxDN50aol386Rx9PD-9r9bFZvvyulpuigkETUWOD8SAgK4CSSXLqYWwTadaKbgCpQWtaa00MdJwwyhrLWXUtIQaosE2dI4efrlT8F9HG9Pu4I9hzC93Fa-ACiIz4QcTE1sb</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2621380934</pqid></control><display><type>article</type><title>Highly efficient hybrid light-emitting transistors incorporating MoOx/Ag/MoOx semi-transparent electrodes</title><source>Royal Society of Chemistry:Jisc Collections:Royal Society of Chemistry Read and Publish 2022-2024 (reading list)</source><creator>Yu Jung Park ; Song, Ae Ran ; Chung, Kwun-Bum ; Kim, Tae-Youb ; Walker, Bright ; Seo, Jung Hwa</creator><creatorcontrib>Yu Jung Park ; Song, Ae Ran ; Chung, Kwun-Bum ; Kim, Tae-Youb ; Walker, Bright ; Seo, Jung Hwa</creatorcontrib><description>Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic–inorganic hybrid LETs (HLETs) have recently shown excellent characteristics in this context, including very low threshold voltage (&lt;5 V), high mobility (up to 5.3 cm2 V−1 s−1) and brightness of 1.64 × 104 cd m−2, a significant improvement compared to organic based LETs. Despite remarkably improved performance, the external quantum efficiency (EQE) of HLETs was ∼0.1%, leaving room for additional improvement. To overcome the low EQEs of HLETs, we have investigated the electrical and optical characteristics of HLETs incorporating MoOx/Ag/MoOx semi-transparent electrodes with variable Ag layer thickness. HLETs with the architecture MoOx/Ag/MoOx (8/15/15 nm) exhibited an electron mobility of 1.06 cm2 V−1 s−1 with on/off ratio of 1.05 × 104, a maximum brightness of 2.09 × 104 cd m−2 and a greatly improved EQE of up to 3.31%. This study provides valuable information about the electrical and optical properties of HLETs with oxide/metal/oxide (OMO) semi-transparent electrodes and contributes towards a comprehensive understanding of the optoelectronic behavior of LETs.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d1tc04674h</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Brightness ; Electrodes ; Electron mobility ; Optical properties ; Optoelectronic devices ; Quantum efficiency ; Semiconductor devices ; Thickness ; Threshold voltage ; Transistors</subject><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-01, Vol.10 (3), p.880-885</ispartof><rights>Copyright Royal Society of Chemistry 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Yu Jung Park</creatorcontrib><creatorcontrib>Song, Ae Ran</creatorcontrib><creatorcontrib>Chung, Kwun-Bum</creatorcontrib><creatorcontrib>Kim, Tae-Youb</creatorcontrib><creatorcontrib>Walker, Bright</creatorcontrib><creatorcontrib>Seo, Jung Hwa</creatorcontrib><title>Highly efficient hybrid light-emitting transistors incorporating MoOx/Ag/MoOx semi-transparent electrodes</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic–inorganic hybrid LETs (HLETs) have recently shown excellent characteristics in this context, including very low threshold voltage (&lt;5 V), high mobility (up to 5.3 cm2 V−1 s−1) and brightness of 1.64 × 104 cd m−2, a significant improvement compared to organic based LETs. Despite remarkably improved performance, the external quantum efficiency (EQE) of HLETs was ∼0.1%, leaving room for additional improvement. To overcome the low EQEs of HLETs, we have investigated the electrical and optical characteristics of HLETs incorporating MoOx/Ag/MoOx semi-transparent electrodes with variable Ag layer thickness. HLETs with the architecture MoOx/Ag/MoOx (8/15/15 nm) exhibited an electron mobility of 1.06 cm2 V−1 s−1 with on/off ratio of 1.05 × 104, a maximum brightness of 2.09 × 104 cd m−2 and a greatly improved EQE of up to 3.31%. This study provides valuable information about the electrical and optical properties of HLETs with oxide/metal/oxide (OMO) semi-transparent electrodes and contributes towards a comprehensive understanding of the optoelectronic behavior of LETs.</description><subject>Brightness</subject><subject>Electrodes</subject><subject>Electron mobility</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Quantum efficiency</subject><subject>Semiconductor devices</subject><subject>Thickness</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNo9jkFPwzAMhSMEEtPYhV8QiXNp3DRpcpwmYEhDu8B5SpO0y1SakmQS-_dkA-HLs57tzw-heyCPQKgsDSRNat7U-ys0qwgjRcNoff3fV_wWLWI8kFwCuOByhtza9fvhhG3XOe3smPD-1AZn8JD9VNhPl5Ibe5yCGqOLyYeI3ah9mHxQl8mb336Xy748K475oLjsTiqcaXawOgVvbLxDN50aol386Rx9PD-9r9bFZvvyulpuigkETUWOD8SAgK4CSSXLqYWwTadaKbgCpQWtaa00MdJwwyhrLWXUtIQaosE2dI4efrlT8F9HG9Pu4I9hzC93Fa-ACiIz4QcTE1sb</recordid><startdate>20220121</startdate><enddate>20220121</enddate><creator>Yu Jung Park</creator><creator>Song, Ae Ran</creator><creator>Chung, Kwun-Bum</creator><creator>Kim, Tae-Youb</creator><creator>Walker, Bright</creator><creator>Seo, Jung Hwa</creator><general>Royal Society of Chemistry</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20220121</creationdate><title>Highly efficient hybrid light-emitting transistors incorporating MoOx/Ag/MoOx semi-transparent electrodes</title><author>Yu Jung Park ; Song, Ae Ran ; Chung, Kwun-Bum ; Kim, Tae-Youb ; Walker, Bright ; Seo, Jung Hwa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-67410d181f21939552688e7fab986a1ac83434ac0d9d6d535be353db03d0c1e73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Brightness</topic><topic>Electrodes</topic><topic>Electron mobility</topic><topic>Optical properties</topic><topic>Optoelectronic devices</topic><topic>Quantum efficiency</topic><topic>Semiconductor devices</topic><topic>Thickness</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu Jung Park</creatorcontrib><creatorcontrib>Song, Ae Ran</creatorcontrib><creatorcontrib>Chung, Kwun-Bum</creatorcontrib><creatorcontrib>Kim, Tae-Youb</creatorcontrib><creatorcontrib>Walker, Bright</creatorcontrib><creatorcontrib>Seo, Jung Hwa</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yu Jung Park</au><au>Song, Ae Ran</au><au>Chung, Kwun-Bum</au><au>Kim, Tae-Youb</au><au>Walker, Bright</au><au>Seo, Jung Hwa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly efficient hybrid light-emitting transistors incorporating MoOx/Ag/MoOx semi-transparent electrodes</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2022-01-21</date><risdate>2022</risdate><volume>10</volume><issue>3</issue><spage>880</spage><epage>885</epage><pages>880-885</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Light-emitting transistors (LETs) have recently emerged as a promising type of optoelectronic device which incorporates the switching function of a transistor with a light-emitting function. Zinc oxynitride (ZnON) based organic–inorganic hybrid LETs (HLETs) have recently shown excellent characteristics in this context, including very low threshold voltage (&lt;5 V), high mobility (up to 5.3 cm2 V−1 s−1) and brightness of 1.64 × 104 cd m−2, a significant improvement compared to organic based LETs. Despite remarkably improved performance, the external quantum efficiency (EQE) of HLETs was ∼0.1%, leaving room for additional improvement. To overcome the low EQEs of HLETs, we have investigated the electrical and optical characteristics of HLETs incorporating MoOx/Ag/MoOx semi-transparent electrodes with variable Ag layer thickness. HLETs with the architecture MoOx/Ag/MoOx (8/15/15 nm) exhibited an electron mobility of 1.06 cm2 V−1 s−1 with on/off ratio of 1.05 × 104, a maximum brightness of 2.09 × 104 cd m−2 and a greatly improved EQE of up to 3.31%. This study provides valuable information about the electrical and optical properties of HLETs with oxide/metal/oxide (OMO) semi-transparent electrodes and contributes towards a comprehensive understanding of the optoelectronic behavior of LETs.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d1tc04674h</doi><tpages>6</tpages></addata></record>
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subjects Brightness
Electrodes
Electron mobility
Optical properties
Optoelectronic devices
Quantum efficiency
Semiconductor devices
Thickness
Threshold voltage
Transistors
title Highly efficient hybrid light-emitting transistors incorporating MoOx/Ag/MoOx semi-transparent electrodes
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T23%3A40%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Highly%20efficient%20hybrid%20light-emitting%20transistors%20incorporating%20MoOx/Ag/MoOx%20semi-transparent%20electrodes&rft.jtitle=Journal%20of%20materials%20chemistry.%20C,%20Materials%20for%20optical%20and%20electronic%20devices&rft.au=Yu%20Jung%20Park&rft.date=2022-01-21&rft.volume=10&rft.issue=3&rft.spage=880&rft.epage=885&rft.pages=880-885&rft.issn=2050-7526&rft.eissn=2050-7534&rft_id=info:doi/10.1039/d1tc04674h&rft_dat=%3Cproquest%3E2621380934%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p183t-67410d181f21939552688e7fab986a1ac83434ac0d9d6d535be353db03d0c1e73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2621380934&rft_id=info:pmid/&rfr_iscdi=true