Nonhysteretic Condition in Negative Capacitance Junctionless FETs

This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness of the ferroelectric...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-02, Vol.69 (2), p.820-826
Main Authors: Rassekh, Amin, Jazaeri, Farzan, Sallese, Jean-Michel
Format: Article
Language:English
Subjects:
Capacitance
Charge-based model
double-gate junctionless field-effect transistor (DG JLFET)
Ferroelectric materials
Ferroelectricity
Field effect transistors
Hysteresis
hysteresis free
instability
Logic gates
Mathematical models
negative capacitance (NC)
Numerical models
Semiconductor devices
Stability analysis
Thickness
Voltage
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Summary:This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness of the ferroelectric layers giving rise to the negative capacitance behavior. The impact of the technological parameters is investigated in order to ensure the hysteresis-free operation. Finally, the stability of NCDG JLFET is predicted over a wide range of temperatures from 77 to 400 K. This approach has been assessed with numerical TCAD simulations.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3133193