Characterization of high quality, monolayer WS2 domains via chemical vapor deposition technique

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2022-02, Vol.128 (2), Article 139
• Main Authors: Asgary, Somayeh, Ramezani, Amir Hoshang, Ebrahimi Nejad, Zhaleh
• Format: Article
• Language: English
• Subjects: Applied physics; Atomic force microscopy; Characterization and Evaluation of Materials; Chemical vapor deposition; Condensed Matter Physics; Flakes; Machines; Manufacturing; Materials science; Microscopes; Microscopy; Monolayers; Nanotechnology; Optical and Electronic Materials; Optical microscopy; Photoluminescence; Physics; Physics and Astronomy; Processes; Raman spectra; Silicon dioxide; Single crystals; Substrates; Sulfur; Sulfurization; Surfaces and Interfaces; Thin Films
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-022-05270-0

WS 2 flakes have been grown successfully on SiO 2 substrate via chemical vapor deposition method by reduction and sulfurization of WO 3 using Ar/H 2 gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy, atomic force microscopy, scanning electron microscopy, Raman spectra and photoluminescence (PL). WS 2 monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS 2 flakes with an average length of more than 35 µm were achieved. The sharp PL peak ( ∼  1.98 eV) and two distinct Raman peaks ( E 2 g and A 1 g ) with a ∼  71.5 cm −1 peak split indicating that relatively high quality WS 2 crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS 2 .