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Characterization of high quality, monolayer WS2 domains via chemical vapor deposition technique
WS 2 flakes have been grown successfully on SiO 2 substrate via chemical vapor deposition method by reduction and sulfurization of WO 3 using Ar/H 2 gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy, atomic force microscopy, scanning el...
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| Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2022-02, Vol.128 (2), Article 139 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Asgary, Somayeh Ramezani, Amir Hoshang Ebrahimi Nejad, Zhaleh |
| description | WS
2
flakes have been grown successfully on SiO
2
substrate via chemical vapor deposition method by reduction and sulfurization of WO
3
using Ar/H
2
gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy, atomic force microscopy, scanning electron microscopy, Raman spectra and photoluminescence (PL). WS
2
monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS
2
flakes with an average length of more than 35 µm were achieved. The sharp PL peak (
∼
1.98 eV) and two distinct Raman peaks (
E
2
g
and
A
1
g
) with a
∼
71.5 cm
−1
peak split indicating that relatively high quality WS
2
crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS
2
. |
| doi_str_mv | 10.1007/s00339-022-05270-0 |
| format | article |
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2
flakes have been grown successfully on SiO
2
substrate via chemical vapor deposition method by reduction and sulfurization of WO
3
using Ar/H
2
gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy, atomic force microscopy, scanning electron microscopy, Raman spectra and photoluminescence (PL). WS
2
monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS
2
flakes with an average length of more than 35 µm were achieved. The sharp PL peak (
∼
1.98 eV) and two distinct Raman peaks (
E
2
g
and
A
1
g
) with a
∼
71.5 cm
−1
peak split indicating that relatively high quality WS
2
crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS
2
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2
flakes have been grown successfully on SiO
2
substrate via chemical vapor deposition method by reduction and sulfurization of WO
3
using Ar/H
2
gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy, atomic force microscopy, scanning electron microscopy, Raman spectra and photoluminescence (PL). WS
2
monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS
2
flakes with an average length of more than 35 µm were achieved. The sharp PL peak (
∼
1.98 eV) and two distinct Raman peaks (
E
2
g
and
A
1
g
) with a
∼
71.5 cm
−1
peak split indicating that relatively high quality WS
2
crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS
2
.</description><subject>Applied physics</subject><subject>Atomic force microscopy</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical vapor deposition</subject><subject>Condensed Matter Physics</subject><subject>Flakes</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Microscopes</subject><subject>Microscopy</subject><subject>Monolayers</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Optical microscopy</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Raman spectra</subject><subject>Silicon dioxide</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Sulfur</subject><subject>Sulfurization</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKw0AUhgdRsF5ewNWAW6NzyyRZSvEGBRcqLofTuTRTkkw6kxbq0xsbwZ1n83Pgv8CH0BUlt5SQ4i4RwnmVEcYykrOCZOQIzajg4ys5OUYzUokiK3klT9FZSmsynmBshtS8hgh6sNF_weBDh4PDtV_VeLOFxg_7G9yGLjSwtxF_vjFsQgu-S3jnAevatl5Dg3fQh4iN7UPyh5LB6rrzm629QCcOmmQvf_UcfTw-vM-fs8Xr08v8fpFpTqshK43Iq5xx4FSzAghzS0aNyUtwRtIKSs21zF0uy-XSGcecFkIAFEZqIWle8HN0PfX2MYyzaVDrsI3dOKmYZIxUVSHp6GKTS8eQUrRO9dG3EPeKEvUDUk0g1QhSHUAqMob4FEqjuVvZ-Ff9T-obkhh3Bw</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>Asgary, Somayeh</creator><creator>Ramezani, Amir Hoshang</creator><creator>Ebrahimi Nejad, Zhaleh</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20220201</creationdate><title>Characterization of high quality, monolayer WS2 domains via chemical vapor deposition technique</title><author>Asgary, Somayeh ; Ramezani, Amir Hoshang ; Ebrahimi Nejad, Zhaleh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-8d459523a31c27a02fb21dd58afd619a8c3c65f568bbfdf2fc444aa7d6c461573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Atomic force microscopy</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemical vapor deposition</topic><topic>Condensed Matter Physics</topic><topic>Flakes</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Microscopes</topic><topic>Microscopy</topic><topic>Monolayers</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Optical microscopy</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Raman spectra</topic><topic>Silicon dioxide</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Sulfur</topic><topic>Sulfurization</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Asgary, Somayeh</creatorcontrib><creatorcontrib>Ramezani, Amir Hoshang</creatorcontrib><creatorcontrib>Ebrahimi Nejad, Zhaleh</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Asgary, Somayeh</au><au>Ramezani, Amir Hoshang</au><au>Ebrahimi Nejad, Zhaleh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of high quality, monolayer WS2 domains via chemical vapor deposition technique</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2022-02-01</date><risdate>2022</risdate><volume>128</volume><issue>2</issue><artnum>139</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>WS
2
flakes have been grown successfully on SiO
2
substrate via chemical vapor deposition method by reduction and sulfurization of WO
3
using Ar/H
2
gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy, atomic force microscopy, scanning electron microscopy, Raman spectra and photoluminescence (PL). WS
2
monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS
2
flakes with an average length of more than 35 µm were achieved. The sharp PL peak (
∼
1.98 eV) and two distinct Raman peaks (
E
2
g
and
A
1
g
) with a
∼
71.5 cm
−1
peak split indicating that relatively high quality WS
2
crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS
2
.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-022-05270-0</doi></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics. A, Materials science & processing, 2022-02, Vol.128 (2), Article 139 |
| issn | 0947-8396 1432-0630 |
| language | eng |
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| source | Springer Nature |
| subjects | Applied physics Atomic force microscopy Characterization and Evaluation of Materials Chemical vapor deposition Condensed Matter Physics Flakes Machines Manufacturing Materials science Microscopes Microscopy Monolayers Nanotechnology Optical and Electronic Materials Optical microscopy Photoluminescence Physics Physics and Astronomy Processes Raman spectra Silicon dioxide Single crystals Substrates Sulfur Sulfurization Surfaces and Interfaces Thin Films |
| title | Characterization of high quality, monolayer WS2 domains via chemical vapor deposition technique |
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