Hot-carrier infrared detection in PbS with ultrafast and highly sensitive responses

Traditional infrared semiconductors with direct narrow bandgaps, such as HgCdTe, InGaAs, and lead salts (PbS, PbSe, and PbTe), have been commercialized for decades in various infrared technologies, such as night vision, military communication, and health monitoring. However, traditional infrared (sp...

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Bibliographic Details
Published in:Applied physics letters 2022-01, Vol.120 (4)
Main Authors: Wu, Shiteng, Qin, Liyun, Li, Qinliang, Wu, Ziyu, Nie, Zhongquan, Jiang, Yiqi, Wang, Jianyu, Wang, Zhendong, Zhou, Yangbo, Yu, Kuai, Wang, Li, Wang, Qisheng
Format: Article
Language:English
Subjects:
Applied physics
Bias
Broadband
Commercialization
Energy conversion
Infrared detectors
Lead selenides
Lead tellurides
Military communications
Night vision
Noise generation
Noise sensitivity
Response time
Room temperature
Semiconductors
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Summary:Traditional infrared semiconductors with direct narrow bandgaps, such as HgCdTe, InGaAs, and lead salts (PbS, PbSe, and PbTe), have been commercialized for decades in various infrared technologies, such as night vision, military communication, and health monitoring. However, traditional infrared (specifically middle- and long-wave infrared) semiconductors suffer from serious noise generation via thermal excitation and external current bias. Although thermal infrared detectors can operate at room temperature, their response speed is very slow, typically on the order of milliseconds or worse, which limits their applications. Herein, we reinvent a classical lead salt semiconductor (PbS) as a room temperature, high speed, and high-detectivity infrared detector. The detection is operated via the self-driven (no bias voltage necessary) photothermoelectric (PTE) effect with a response time reaching 500 ns (limited by the measurement setup)—three orders of magnitude faster than commercial PTE and photoconductive PbS detectors. Furthermore, the physical principle of hot-carrier-dominated heat energy conversion is proposed to understand the unconventional ultrafast response behavior. Combined with high sensitivity at room temperature (noise equivalent power 0.3 pW Hz−1/2) and broadband detection range (0.4–2.3 μm), this hot carrier makes the traditional commercial semiconductor PbS applicable to a class of infrared detection applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0078394