n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

•n-ZnO/p-CuZnS heterojunction grown by spray pyrolysis showed good rectification.•Heterostructure showed good responsivity of 0.255 A/W for UV light of 385 nm.•LT Raman analysis showed strain variation with temperature. [Display omitted] In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetec...

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Published in:Sensors and actuators. A. Physical. 2021-12, Vol.332, p.113169, Article 113169
Main Authors: Ganesha Krishna, V.S., Mahesha, M.G.
Format: Article
Language:English
Subjects:
Bias
Carrier transport
Electric potential
Heterojunctions
Heterostructures
Illumination
Low temperature
LT Raman
Nanocrystals
Photoluminescence
Photometers
Raman spectroscopy
Spray pyrolysis
Strain analysis
Temperature
Temperature dependence
Thermionic emission
Thin film chalcogenides
Transport properties
Ultraviolet radiation
UV photodetector
Voltage
Zinc oxide
Zinc oxides
ZnO/CuZnS
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container_title Sensors and actuators. A. Physical.
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creator Ganesha Krishna, V.S.
Mahesha, M.G.
description •n-ZnO/p-CuZnS heterojunction grown by spray pyrolysis showed good rectification.•Heterostructure showed good responsivity of 0.255 A/W for UV light of 385 nm.•LT Raman analysis showed strain variation with temperature. [Display omitted] In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption
doi_str_mv 10.1016/j.sna.2021.113169
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The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.sna.2021.113169</doi></addata></record>
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source ScienceDirect Journals
subjects Bias
Carrier transport
Electric potential
Heterojunctions
Heterostructures
Illumination
Low temperature
LT Raman
Nanocrystals
Photoluminescence
Photometers
Raman spectroscopy
Spray pyrolysis
Strain analysis
Temperature
Temperature dependence
Thermionic emission
Thin film chalcogenides
Transport properties
Ultraviolet radiation
UV photodetector
Voltage
Zinc oxide
Zinc oxides
ZnO/CuZnS
title n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region
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