Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

• Published in: Russian physics journal 2021-12, Vol.64 (8), p.1505-1512
• Main Authors: Timofeev, V. A., Mashanov, V. I., Nikiforov, A. I., Loshkarev, I. D., Skvortsov, I. V., Gulyaev, D. V., Korolkov, I. V., Kolyada, D. V., Firsov, D. D., Komkov, O. S.
• Format: Article
• Language: English
• Subjects: Annealing; Condensed Matter Physics; Epitaxy; Hadrons; Heavy Ions; Lasers; Mathematical and Computational Physics; Multi Quantum Wells; Multilayers; Nuclear Physics; Optical Devices; Optical properties; Optics; Oxidation; Oxides; Periodic structures; Phase transitions; Photoluminescence; Photonics; Physics; Physics and Astronomy; Physics of Semiconductors and Dielectrics; Quantum wells; Silicon; Theoretical; Thermal stability; Tin; Tin dioxide; Tin oxides
• ISSN: 1064-8887; 1573-9228
• DOI: 10.1007/s11182-021-02483-3

A hybrid material including tin oxides on the top of a Ge 0.3 Si 0.7– y Sn y /Si multiple quantum well structure has been first obtained. Tin oxides such as SnO and SnO 2 were formed as a result of phase transitions during the oxidation of polycrystalline tin films (β-Sn). The photoluminescence was demonstrated with a maximum intensity at about 2.34 eV, which corresponds to the band gap of SnO. The glow at the photogeneration point is seen in green. The photoluminescence from SnO is observed after the annealing in the temperature range of 300-400 °C. An increase in the annealing temperature leads to a sharp quenching of the photoluminescence. It is associated with the phase transition from SnO to SnO 2 . The growth of Ge 0.3 Si 0.7– y Sn y /Si multilayer structures is studied at the Sn content from 0 to 18%. It was found that GeSiSn compounds are thermally stable in the annealing temperature range of 300–550°C. In addition to the photoluminescence signal in the visible range from tin oxides, the photoluminescence signal in the infrared range of about 3 μm appears. It is formed from the GeSiSn/Si structure.