Study of memristive devices on the base of siloxane quatrothiophene dimer

Memristive devices may be based on inorganic or organic materials. In this work we were assembled memristive devices using a thiophene oligomer for the first time. The semiconductive oligothiophene film was prepared by Langmuir-Schaefer technique. Both Langmuir and Langmuir-Schaefer films were chara...

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Bibliographic Details
Main Authors: Prudnikov, N. V., Malakhova, Y. N., Barteneva, V. M., Skorotetcky, M. S., Borshchev, O. V., Demin, V. A., Erokhin, V. V.
Format: Conference Proceeding
Language:English
Subjects:
Dimers
Memory devices
Organic materials
Siloxanes
Online Access:Get full text
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Summary:Memristive devices may be based on inorganic or organic materials. In this work we were assembled memristive devices using a thiophene oligomer for the first time. The semiconductive oligothiophene film was prepared by Langmuir-Schaefer technique. Both Langmuir and Langmuir-Schaefer films were characterized by a number of methods. Non-volatile three-electrode memristive devices were assembled and characterized by measuring the I-V curve, kinetics and endurance.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0069489