Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm

A pulsed source of radiation in the spectral region of 1060 nm with a kilowatt level peak output power is developed based on a vertical stack of microbars of stripe semiconductor lasers with an ultra-wide (800 μm) aperture. The laser stack contains three microbars with three emitters each, which ens...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2022-02, Vol.52 (2), p.171-173
Main Authors: Slipchenko, S.O., Podoskin, A.A., Veselov, D.A., Efremov, L.S., Zolotarev, V.V., Kazakova, A.E., Kop’ev, P.S., Pikhtin, N.A.
Format: Article
Language:English
Subjects:
Apertures
Current pulses
Current sources
Emitters
laser stack
pulsed semiconductor laser
Semiconductor lasers
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Summary:A pulsed source of radiation in the spectral region of 1060 nm with a kilowatt level peak output power is developed based on a vertical stack of microbars of stripe semiconductor lasers with an ultra-wide (800 μm) aperture. The laser stack contains three microbars with three emitters each, which ensures an emitting area of 2.6 × 0.4 mm. The highest radiative efficiency of the stack is 2.48 W A −1 . The maximum achieved peak power reached 1400 W under pumping by current pulses with an amplitude of 650 A and a duration of 100 ns and is limited by the current source capacity.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL17985