Ionization of Impurities by Constant and Alternating Electric Fields in Semiconductor Single-Walled Carbon Nanotubes

A quasi-classical approximation is used to study the probability of impurities in semiconductor single-walled carbon nanotubes being ionized in strong constant and alternating electric fields. The electric fields are polarized along the nanotube axis. Analytical expressions for the probability of io...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2022, Vol.86 (1), p.33-37
Main Authors: Babina, O. Yu, Glazov, S. Yu, Podgornaya, I. A.
Format: Article
Language:English
Subjects:
Electric fields
Hadrons
Heavy Ions
Impurities
Ionization
Mathematical analysis
Nuclear Physics
Physics
Physics and Astronomy
Single wall carbon nanotubes
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Summary:A quasi-classical approximation is used to study the probability of impurities in semiconductor single-walled carbon nanotubes being ionized in strong constant and alternating electric fields. The electric fields are polarized along the nanotube axis. Analytical expressions for the probability of ionization in a constant or alternating electric field only are obtained for limit cases.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873822010038