Conductivity of Semiconductor Single-Walled Carbon Nanotubes with Allowance for the Ionization of Impurity Centers

A study is performed of the dependence of the density of current in a semiconductor single-walled carbon nanotube on the characteristics of applied constant and alternating electric fields, allowing for the ionization of impurity centers. The solution to the Boltzmann kinetic equation with the Bhatn...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2022, Vol.86 (1), p.38-41
Main Authors: Glazov, S. Yu, Mescheryakova, N. E., Podgornaya, I. A.
Format: Article
Language:English
Subjects:
Electric fields
Hadrons
Heavy Ions
Impurities
Ionization
Kinetic equations
Nuclear Physics
Physics
Physics and Astronomy
Single wall carbon nanotubes
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Summary:A study is performed of the dependence of the density of current in a semiconductor single-walled carbon nanotube on the characteristics of applied constant and alternating electric fields, allowing for the ionization of impurity centers. The solution to the Boltzmann kinetic equation with the Bhatnagar–Gross–Krook model collision integral is used to calculate the current, depending on the rates of generation and recombination.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873822010117