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Efficient spin pumping into metallic SrVO3 epitaxial films

•A sizable increase in the damping factor of Permalloy when capped with SrVO3.•Spin pumping seems the most reasonable mechanism to explain the increase of magneto-dynamical dissipation.•SrVO3 containing Vanadium a (3d1 ion) shows a significantly different behaviour compared to VO2 but similar to met...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2022-03, Vol.546, p.168871, Article 168871
Main Authors: Macià, F., Mirjolet, M., Fontcuberta, J.
Format: Article
Language:English
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Summary:•A sizable increase in the damping factor of Permalloy when capped with SrVO3.•Spin pumping seems the most reasonable mechanism to explain the increase of magneto-dynamical dissipation.•SrVO3 containing Vanadium a (3d1 ion) shows a significantly different behaviour compared to VO2 but similar to metallic vanadium.•Importance of density of states at the Fermi level and strength of e–e correlations and e-lattice coupling. Spin pumping across interfaces between metallic SrVO3, where V is a 3d1 ion, epitaxial thin films and ferromagnetic Ni80Fe20 is reported. Data shows an efficient spin pumping with a spin mixing conductance value (g↑↓= 11.8 × 1018 m−2) similar to that reported in metallic Vanadium but significantly larger than that measured in isoelectronic (3d1) VO2, which displays a Mott transition. Data are rationalized in terms of the relevance of density of states at the Fermi level and the relative strength of electron–electron correlations and electron-lattice coupling as toggles to tune spin-mixing conductance across interfaces.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2021.168871