Flexible atomic buckling and homogeneous edge states in few-layer Bi(110) films

The structure and edge states of two-dimensional few-layer Bi(110) films grown on a graphene/SiC substrate were studied by low-temperature scanning tunneling microscopy and spectroscopy. We found that the local density of states of few-layer Bi(110) films are layer-dependent and that the films trans...

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Bibliographic Details
Published in:Nano research 2022-03, Vol.15 (3), p.2374-2381
Main Authors: Lyu, Yanfeng, Daneshmandi, Samira, Huyan, Shuyuan, Chu, Chingwu
Format: Article
Language:English
Subjects:
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Buckling
Chemistry and Materials Science
Condensed Matter Physics
Displacements (lattice)
Graphene
Inversions
Low temperature
Materials Science
Nanotechnology
Research Article
Scanning tunneling microscopy
Silicon carbide
Silicon substrates
Spectroscopy
Topology
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Summary:The structure and edge states of two-dimensional few-layer Bi(110) films grown on a graphene/SiC substrate were studied by low-temperature scanning tunneling microscopy and spectroscopy. We found that the local density of states of few-layer Bi(110) films are layer-dependent and that the films transition from exhibiting semiconducting characteristics to metallic ones as the number of layers increases. The in-plane lattice structure has numerous displacements and inversions, which implies that the atomic arrangement and atomic buckling in ultrathin Bi(110) films are flexible. The edges formed between 4-monolayer Bi(110) and graphene are reconstructed and distorted, and the corresponding edge states are topographically dependent. Steps from the substrate and domain boundaries also modify the electronic structures and induce additional defect-dependent states, We also found that the zigzag-shaped step edges in few-layer Bi(110) films are nonreconstructed and possess layer-dependent homogeneous edge states, providing a very likely platform for further research on quantum interference of the edge mode in order to confirm the topology in Bi(110).
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-021-3735-y