Fabrication and electrical characterization of solution processed Ni/MgO/p-Si/Al MIS diodes

This study reports on the fabrication and characterization of Ni/MgO/ p -Si/Al MIS diodes to investigate the electrical and dielectric properties of the fabricated structures. The MgO thin films were deposited on p -type silicon with (100) orientation using solution processed method that includes co...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2022-03, Vol.128 (3), Article 226
Main Authors: Kumar, Naveen, Azad, Seema, Chand, Subhash
Format: Article
Language:English
Subjects:
Aluminum
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Crystallites
Dielectric properties
Diodes
Dislocation density
Electrical properties
Emission analysis
Equivalent circuits
Machines
Magnesium oxide
Manufacturing
Materials science
Nanotechnology
Nickel
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Silicon
Sol-gel processes
Space charge
Spin coating
Structural analysis
Surfaces and Interfaces
Thin Films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study reports on the fabrication and characterization of Ni/MgO/ p -Si/Al MIS diodes to investigate the electrical and dielectric properties of the fabricated structures. The MgO thin films were deposited on p -type silicon with (100) orientation using solution processed method that includes combined sol–gel and spin coating techniques. The structural analysis performed using X-ray diffractometry reveals polycrystalline nature of the deposited MgO films having crystallite size of 30 nm and dislocation density 1.077 × 10 15 lines/m 2 . The fabricated MIS structure exhibits good rectification behavior over the measured bias range which was also analyzed using various well-accepted conduction mechanisms viz. Poole–Frenkel emission, Schottky emission, Fowler‒Nordheim tunneling and Space charge limited conduction. Further, from the C – V characteristics analysis, the barrier heights obtained for Ni/MgO/ p -Si/Al structures are 1.26 eV, 1.24 eV, 1.21 eV and 1.11 eV at frequencies 10 kHz, 100 kHz, 300 kHz and 1 MHz. Moreover, the impedance spectrum of the Ni/MgO/ p -Si/Al MIS diodes was also analyzed using equivalent circuit showing significant change in the internal resistance and capacitance of the diode.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-05378-3