Interface engineering improves the performance of green perovskite light-emitting diodes

To realize high-performance perovskite light-emitting diodes (PeLEDs), the underlying charge transport layer plays a vital role in charge injection and perovskite growth. Herein, a rational interface engineering method has been proposed to enhance the interfacial crystallization of perovskite films...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-02, Vol.10 (8), p.2998-3005
Main Authors: Guo, Ming-Lei, Lu, Yu, Cai, Xiao-Yi, Shen, Yang, Qian, Xiao-Yan, Ren, Hao, Li, Yan-Qing, Wang, Wen-Jun, Tang, Jian-Xin
Format: Article
Language:English
Subjects:
Charge injection
Charge transport
Control equipment
Crystal structure
Crystallization
Current efficiency
Excitons
Light emitting diodes
Performance enhancement
Perovskites
Polystyrene resins
Quantum efficiency
Radiative recombination
Thiocyanates
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Summary:To realize high-performance perovskite light-emitting diodes (PeLEDs), the underlying charge transport layer plays a vital role in charge injection and perovskite growth. Herein, a rational interface engineering method has been proposed to enhance the interfacial crystallization of perovskite films and simultaneously suppress the nor-radiative recombination of excitons by modifying the poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer with ammonium thiocyanate (AT). The morphological control of the perovskite film with the improved crystal orientation arises from the strong interfacial chemical force between AT and perovskite, which promotes enhanced radiative recombination. The optimized PeLEDs achieve a peak external quantum efficiency of 14.7% and current efficiency of 45.4 cd A −1 , which are approximately 4.6 times and 4.5 times higher than the control device, respectively.
ISSN:2050-7526
2050-7534
DOI:10.1039/D1TC05706E