Effect of the Parameters of Grain Misorientation in Multicrystalline Silicon on the Formation of the SEM Image Contrast

In this paper, we analyze the contrast of images obtained by scanning electron microscopy (SEM) in the backscattered electron mode, which shows that the contrast on the polished surface of multicrystalline silicon (multisilicon) is due to the parameters of misorientation between grains. The contrast...

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2022-02, Vol.16 (1), p.122-127
Main Authors: Peshcherova, S. M., Chueshova, A. G., Zimin, M. D., Ludina, E. A., Pavlova, L. A., Nepomnyashchikh, A. I., Zubritcky, S. M., Ribyakov, M. Yu, Dovchenko, L. K.
Format: Article
Language:English
Subjects:
Backscattering
Boundaries
Chemistry and Materials Science
Crystal lattices
Crystallization
Density
Etchants
Grains
Image contrast
Materials Science
Misalignment
Parameters
Scanning electron microscopy
Silicon
Surfaces and Interfaces
Thin Films
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Summary:In this paper, we analyze the contrast of images obtained by scanning electron microscopy (SEM) in the backscattered electron mode, which shows that the contrast on the polished surface of multicrystalline silicon (multisilicon) is due to the parameters of misorientation between grains. The contrast values corresponding to special oblique boundaries with various inverse density values of the coinciding nodes of the crystal lattices of neighboring grains forming these boundaries are established. Since the SEM method allows relatively large surface areas of the samples (~1 cm 2 ) to be studied, on account of the method proposed here for identifying special oblique boundaries, it is possible to analyze the nature of the interaction of boundaries and their distribution density in the structure, depending on certain crystallization conditions. In SEM studies of multisilicon, this can be important for initial analysis of the structure and further formulation of research problems without the use of special selective etchants that destroy the surface of the studied samples.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451022010293