Band Diagram of the InAs1 – ySby/InAsSbP Heterojunction in the Composition Range y < 0.2

• Published in: Physics of the solid state 2021-04, Vol.63 (4), p.595-602
• Main Authors: Moiseev, K. D., Romanov, V. V.
• Format: Article
• Language: English
• Subjects: Composition; Conduction bands; Current voltage characteristics; Electroluminescence; Epitaxial growth; Heterojunctions; Heterostructures; Indium arsenide antimonide phosphide; Low temperature; Organometallic compounds; Physics; Physics and Astronomy; Solid State Physics; Substrates; Vapor phase epitaxy
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783421040156

The n + -InAs/ n 0 -InAs 1 –   y Sb y / p -InAsSbP heterostructures with asymmetric band offsets at the heteroboundaries of the active region have been grown by vapor-phase epitaxy from organometallic compounds on InAs substrates. The forward branch of the current–voltage characteristics of the obtained heterostructures at low temperatures has segments with the tunneling conduction. The energy-band diagram of the double InAs/InAs 1 –   y Sb y /InAsSbP heterostructure is calculated in the range of compositions ( y < 0.2) of the narrow-gap active region. The InAs 1 –   y Sb y /InAsSbP heterojunction is shown to be a II type heterojunction in this composition range. The electroluminescence observed in the experiment for the n + -InAs/ n 0 -InAs 1 ‒   y Sb y / p -InAsSbP heterostructures with the active region in compositions y > 0.14 is due to interface radiative transitions with participation of localized hole states at the II type heteroboundary.