α–β Phase Transition in the Impurity Phase of a SiO2 Single Crystal

Thermal oxidation of a silicon single crystal in the temperature range of 293–1293 K has been investigated using high-temperature X-ray diffractometry directly in a beam. An anomaly in the intensity and angular position of diffuse scattering from the single-crystal surface is found. The anomaly is e...

Full description

Saved in:
Bibliographic Details
Published in:Technical physics letters 2021-05, Vol.47 (5), p.349-352
Main Authors: Kalanov, M. U., Khugaev, A. V.
Format: Article
Language:English
Subjects:
Angular position
Beta phase
Classical and Continuum Physics
Crystal surfaces
High temperature
Impurities
Oxidation
Phase transitions
Physics
Physics and Astronomy
Silicon
Silicon dioxide
Single crystals
Sublimation
Temperature dependence
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Thermal oxidation of a silicon single crystal in the temperature range of 293–1293 K has been investigated using high-temperature X-ray diffractometry directly in a beam. An anomaly in the intensity and angular position of diffuse scattering from the single-crystal surface is found. The anomaly is explained as being due to oxidation of the silicon surface according to the Deal–Grove model and sublimation of the oxide layer in dependence of temperature. It is established that the single-crystal bulk (silicon medium) underwent the α–β phase transition in the crystalline impurity phase of silicon dioxide in this temperature range, which is similar to the α–β transition of quartz in air.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785021040106