Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth

Dislocations are considered crucial linear defects in the synthesis of heteroepitaxial single crystal diamond. Minimizing the dislocation density is a significant challenge for using diamond in electronics. This especially holds for diamond growth on iridium substrates with a large lattice constant...

Full description

Saved in:
Bibliographic Details
Published in:Carbon (New York) 2022-03, Vol.188, p.544-544
Main Authors: WANG, Wei-Hua, WANG, Yang, SHU, Guo-Yang, Fang, Shi-Shu, Han, Jie-Cai, DAI, Bing, ZHU, Jia-Qi
Format: Article
Language:English
Subjects:
Buffer layers
Crystal defects
Crystal dislocations
Crystal growth
Crystal structure
Density
Diamond films
Dislocation density
Epitaxial growth
Film thickness
Iridium
Laser arrays
Lattice parameters
Nucleation
Single crystals
Substrates
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Dislocations are considered crucial linear defects in the synthesis of heteroepitaxial single crystal diamond. Minimizing the dislocation density is a significant challenge for using diamond in electronics. This especially holds for diamond growth on iridium substrates with a large lattice constant difference of 7.1%. We first discuss several aspects of the effects of dislocations in heteroepitaxial diamond growth during heterogeneous nucleation and growth, including their generation, types and characterization. Next, methods to reduce dislocation density are summarized, including increasing dislocation reactions (increasing the diamond film thickness and off-axis substrate growth), removing dislocations (conventional epitaxial lateral growth, pendeoepitaxial lateral growth and patterned nucleation growth), and other methods (three-dimensional growth, metal-assisted termination and using a pyramidal substrate). The dislocation density has been reduced to 6x105 cm-2, based on the use of a micrometric laser-pierced hole array, a method similar to patterned nucleation growth. To further reduce dislocation density and improve crystal quality, proposed ways of controlling the introduction of dislocations (substrate patterning, buffer layer and compliant substrate methods) are highlighted.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2021.12.004