Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain

• Published in: Carbon (New York) 2022-03, Vol.188, p.220-228
• Main Authors: Kudara, Ken, Arai, Masakazu, Suzuki, Yukiko, Morishita, Aoi, Tsunoda, Jun, Hiraiwa, Atsushi, Kawarada, Hiroshi
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition; Contact resistance; Current density; Diamond FETs; Diamonds; Direct current; Electric properties; Electrodes; Field effect transistors; High drain current density; Metal oxide semiconductors; MOSFETs; Output power; Radio frequency; Semiconductor devices; Semiconductors; Transistors; Transmission lines
• ISSN: 0008-6223; 1873-3891
• DOI: 10.1016/j.carbon.2021.11.034

This paper reports the direct current and radio frequency characteristics of two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with microwave-plasma-chemical-vapor-deposition regrown P++-diamond (B ≈ 1 × 1022 cm−3) layers as their source and drain regions. To evaluate the ohmic contact resistance, two patterns of transmission line method were fabricated—one with P++-diamond/2DHG diamond interfaces and the other with only the P++-diamond layer. Three resistance components (metal/P++-diamond contact resistance (0.39 Ωmm), P++-diamond access resistance, and P++-diamond/2DHG contact resistance (∼0.65 Ω mm) were evaluated for the first time. The introduction of the P++-diamond ohmic contacts generated a drain current density of 1 A/mm and an output power density of 3.6 W/mm at a quiescent drain voltage (VDS, Q) of −50 V at 1 GHz; an output power of 1.7 W was achieved at a VDS, Q of −40 V at 1 GHz with a 1 mm gate width. These values were obtained in 2DHG diamond MOSFETs with a regrown P++-diamond layer with 1 μ m gate length. These results indicate that regrown P++-diamond has the potential to improve the drain current density and output power density of 2DHG diamond field-effect transistors. •P++-diamond-layer-containing 2DHG-diamond MOSFETs were fabricated.•Three resistance components were evaluated.•The highest output power (1.7 W) ever reported was achieved for a diamond FET.•On-resistance reduction and drain current density enhancement were achieved.•Regrown P++-diamond can improve FET drain current density and output power density.