physica status solidi (RRL) - Rapid Research Letters

Heteroepitaxial ZnGa2O4 thin films grown on sapphire substrates would be preferable for fundamental studies on properties of this material for device applications. To achieve near‐stoichiometric ZnGa2O4 epitaxial thin films by pulsed laser deposition (PLD), the severe loss of Zn must be overcome. He...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2020-09, Vol.14 (9)
Main Authors: Luo, Sijun, Harrington, George F, Kuan-Ting, Wu, Lippert, Thomas
Format: Article
Language:English
Subjects:
Aluminum oxide
Epitaxial growth
Fluence
Pulsed laser deposition
Pulsed lasers
Sapphire
Stoichiometry
Substrates
Thin films
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Summary:Heteroepitaxial ZnGa2O4 thin films grown on sapphire substrates would be preferable for fundamental studies on properties of this material for device applications. To achieve near‐stoichiometric ZnGa2O4 epitaxial thin films by pulsed laser deposition (PLD), the severe loss of Zn must be overcome. Herein, the fabrication and characterization of epitaxial (111) ZnGa2O4 thin films grown on (00.1) sapphire substrates by PLD using a Zn0.97Ga0.03O target are reported. A deposition temperature of 750 °C and a laser fluence of 3.5 J cm−2 are suitable for growing near‐stoichiometric ZnGa2O4 film. The in‐plane orientation relationship is identified to be [1¯1¯2] ZnGa2O4//[11.0] Al2O3. A 14.2 nm thick (111) ZnGa2O4 epitaxial thin film with a Zn/Ga atomic ratio of about 0.47 shows a narrow full width at half maximum value for the rocking curve of 0.1° and a direct optical bandgap of 4.9 eV.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.202000270