Electron Beam Lithography Fabrication of Superconducting Tunnel Structures

An electron beam lithography technique for fabricating submicron Nb–AlN–NbN junctions has been developed and optimized. An exposure dose, development time, and plasma-chemical etching parameters that would ensure the maximum quality parameter of the R j / R n tunnel junctions have been selected. The...

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Bibliographic Details
Published in:Physics of the solid state 2021-09, Vol.63 (9), p.1351-1355
Main Authors: Fominskii, M. Yu, Filippenko, L. V., Chekushkin, A. M., Koshelets, V. P.
Format: Article
Language:English
Subjects:
Aluminum compounds
Chemical etching
Comparative analysis
Electron beam lithography
Integrated circuit fabrication
Niobium nitride
Parameters
Physics
Physics and Astronomy
Reproducibility
Solid State Physics
Substrates
Superconductors
Tunnel junctions
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Summary:An electron beam lithography technique for fabricating submicron Nb–AlN–NbN junctions has been developed and optimized. An exposure dose, development time, and plasma-chemical etching parameters that would ensure the maximum quality parameter of the R j / R n tunnel junctions have been selected. The use of negative resist ma-N 2400 with a lower sensitivity and better contrast as compared with resist UVN 2300-0.5 has made it possible to improve the reproducibility of the structure fabrication process and fabricate the submicron Nb–AlN–NbN tunnel junctions (an area from 2.0 to 0.2 μm 2 ) with a high current density and a quality parameter of R j / R n > 15. The spread of the parameters of the submicron tunneling structures over a substrate and the cycle-to-cycle reproducibility of the structure fabrication process have been experimentally measured.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783421090067