Infrared Photoreflectance of III–V Semiconductor Materials (Review)

The photoreflectance method, i.e., a contactless version of optical modulation spectroscopy is applied to the study of the band structure features of single-crystal semiconductors, their doping level, composition of alloys, surface and interface energy band bendings. By the example of high-quality G...

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Bibliographic Details
Published in:Physics of the solid state 2021-08, Vol.63 (8), p.1181-1204
Main Author: Komkov, O. S.
Format: Article
Language:English
Subjects:
Alloys
Analysis
Composition effects
Crystal structure
Crystal surfaces
Energy bands
Excitons
Fourier transforms
Gallium arsenide
Group III-V semiconductors
Infrared spectroscopy
Line shape
Line spectra
Measurement methods
Physics
Physics and Astronomy
Semiconductor materials
Single crystals
Solid State Physics
Spectrum analysis
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Summary:The photoreflectance method, i.e., a contactless version of optical modulation spectroscopy is applied to the study of the band structure features of single-crystal semiconductors, their doping level, composition of alloys, surface and interface energy band bendings. By the example of high-quality GaAs, the possibility of describing the photoreflectance spectral line shape within the one-electron and exciton models is demonstrated. An oscillating structure well described by exciton effects is detected in the spectra of ultrapure samples of this material. For III–V alloys, the results obtained by the photoreflectance method on the effect of the composition and temperature on the band gap and spin–orbit splitting are reviewed. The problem of Fermi-level determination (pinning) on the III–V crystal surface is considered. The currently developed method for measuring the photoreflectance in the mid-infrared region, i.e., the photomodulation Fourier transform infrared spectroscopy of reflectance is described in detail. It is shown that the crucial role in similar measurements is played by phase correction. Original results demonstrating the capability of this method in a wide wavelength range are presented.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783421080126