Structural Characterization of Pb0.7Sn0.3Te Crystalline Topological Insulator Thin Films Grown on Si(111)

Selection and optimization of the technological parameters of growth of Pb 0.7 Sn 0.3 Te layers with a thickness up to 300 nm grown on a Si(111) surface at a temperature of 230 to 400°C is carried out. The surface morphology of the resulting films is studied, and the epitaxial relations are determin...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2021-08, Vol.55 (8), p.682-685
Main Authors: Kaveev, A. K., Bondarenko, D. N., Tereshchenko, O. E.
Format: Article
Language:English
Subjects:
Magnetic Materials
Magnetism
Morphology
Optimization
Physics
Physics and Astronomy
Silicon substrates
Structural analysis
Thickness
Thin films
Topological insulators
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Selection and optimization of the technological parameters of growth of Pb 0.7 Sn 0.3 Te layers with a thickness up to 300 nm grown on a Si(111) surface at a temperature of 230 to 400°C is carried out. The surface morphology of the resulting films is studied, and the epitaxial relations are determined. It is shown that, depending on the growth temperature, the surface morphology ranges from smooth micrometer-sized islands with monoatomic steps on their surface to narrower terraces.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378262108011X