Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles

The effect of optical illumination in the visible band on the resistive switching in ITO/ZrO 2 (Y)/ n -Si metal—oxide—semiconductor (MOS) structures (including those with Au nanoparticles embedded in the ZrO 2 (Y) layer) is studied. It is found that the dependence of the logical gap between the resi...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2021-09, Vol.55 (9), p.731-734
Main Authors: Filatov, D. O., Shenina, M. E., Rozhentsov, I. A., Koryazhkina, M. N., Novikov, A. S., Antonov, I. N., Ershov, A. V., Gorshkov, A. P., Gorshkov, O. N.
Format: Article
Language:English
Subjects:
Absorption
Gold
Illumination
Magnetic Materials
Magnetism
Metal oxide semiconductors
Nanoparticles
Photoexcitation
Physics
Physics and Astronomy
Silicon substrates
Switching
Yttrium
Zirconium dioxide
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Summary:The effect of optical illumination in the visible band on the resistive switching in ITO/ZrO 2 (Y)/ n -Si metal—oxide—semiconductor (MOS) structures (including those with Au nanoparticles embedded in the ZrO 2 (Y) layer) is studied. It is found that the dependence of the logical gap between the resistance states on the photoexcitation intensity had a threshold nature. The logical gap decreases with further increasing photoexcitation intensity above the threshold. This effect is ascribed to the heating of active layers of the MOS structure due to interband optical absorption in the Si substrate. The suppression of resistive switching by photoexcitation at a wavelength of 650 nm (corresponding to plasmon resonance in Au nanoparticles) due to plasmon optical absorption in nanoparticles is observed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782621090050