Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon

The photoluminescence of silicon strained by four-point bending at the temperature 600°C is studied. The so-called dislocation luminescence lines D1, D2, D3, and D4 are observed on both sides of the strained samples. It is found that, for samples with a density of introduced dislocations of ~10 7 cm...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2021-07, Vol.55 (7), p.633-636
Main Authors: Sobolev, N. A., Kalyadin, A. E., Feklisova, O. V., Yakimov, E. B.
Format: Article
Language:English
Subjects:
Compressive properties
Dislocation density
Luminescence
Magnetic Materials
Magnetism
Photoluminescence
Physics
Physics and Astronomy
Silicon
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Summary:The photoluminescence of silicon strained by four-point bending at the temperature 600°C is studied. The so-called dislocation luminescence lines D1, D2, D3, and D4 are observed on both sides of the strained samples. It is found that, for samples with a density of introduced dislocations of ~10 7 cm –2 , the intensities of the D3 and D4 luminescence lines are equal on both sides of the samples, whereas the intensities of the D1 and D2 lines on the stretched side are higher than those on the compressed side. The behavior of the intensities of the D1 and D2 lines closely correlates with the number of dislocation trails. The possible causes of the experimentally observed effect are discussed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782621070174