Design of a Dual Change-Sensing 24T Flip-Flop in 65 nm CMOS Technology for Ultra Low-Power System Chips

In this paper, a flip-flop (FF) that minimizes the transition of internal nodes by using a dual change-sensing scheme is discussed. Further, in order to reduce power consumption, a new technique to eliminate short-circuit currents is described. The proposed dual change-sensing FF (DCSFF) composed of...

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Bibliographic Details
Published in:Electronics (Basel) 2022-03, Vol.11 (6), p.877
Main Authors: Park, Jun-Young, Jin, Minhyun, Kim, Soo-Youn, Song, Minkyu
Format: Article
Language:English
Subjects:
Circuits
CMOS
Design
Power consumption
Power supply
Short circuit currents
Transistors
Transmission gates
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Summary:In this paper, a flip-flop (FF) that minimizes the transition of internal nodes by using a dual change-sensing scheme is discussed. Further, in order to reduce power consumption, a new technique to eliminate short-circuit currents is described. The proposed dual change-sensing FF (DCSFF) composed of 24T (T: number of transistors) has the lowest dynamic power consumption among conventional FFs, independent of the data activity ratio. According to the measured results with a 65 nm CMOS process, the power consumption of DCSFF is reduced by 98% and 32%, when the data activity is close to 0% and 100%, respectively, compared to that of conventional transmission gate FF. Further, compared to that of change-sensing FF, the power consumption of DCSFF is reduced by 26% when the data activity is close to 100%.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics11060877