Graphene-Based Plasmonic Metamaterial Perfect Absorber for Biosensing Applications

Graphene as a mono-atomic sheet has recently grabbed attention as a material with enormous properties. It has also been examined for enhancing absorbance in the current plasmonic structure. This has led to an increment in the sensitivity of the plasmonic sensors. In this paper, we present theoretica...

Full description

Saved in:
Bibliographic Details
Published in:Electronics (Basel) 2022-03, Vol.11 (6), p.930
Main Authors: Koondhar, Masood Ali, Jamali, Abdul Aleem, Ren, Xin-Cheng, Laghari, Mujeeb ur Rehman, Qureshi, Fatima, Anjum, Muhammad Rizwan, Khan, Yousuf, Zhai, Yongzhi, Zhu, Yanmin
Format: Article
Language:English
Subjects:
Absorbance
Absorbers
Absorbers (materials)
Biomarkers
Biosensors
Boundary conditions
Chemical vapor deposition
Geometry
Glass substrates
Gold
Graphene
Metamaterials
Plasmonics
Refractivity
Sensitivity
Sensors
Sheets
Simulation
Software
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Graphene as a mono-atomic sheet has recently grabbed attention as a material with enormous properties. It has also been examined for enhancing absorbance in the current plasmonic structure. This has led to an increment in the sensitivity of the plasmonic sensors. In this paper, we present theoretical investigation of the novel graphene-based plasmonic metamaterial perfect absorber for biosensing applications. The simulation study performs the analysis of the novel plasmonic metamaterial absorber structure by adding coatings of graphene sheets. Each sheet of graphene enhances absorbance of the structure. In this study, we demonstrate three layers of graphene sheets lead to perfect absorbance (100%) for multiple bands in the visible and near-infrared regions. Furthermore, we also computed the sensitivity of the graphene-based proposed structure by varying the refractive index (RI) of the sensing region from 1.33–1.36 with RI change of 0.01. Proposed fabrication steps for realization of the device are also discussed.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics11060930