Study of the Factors Limiting the Efficiency of Vertical-Type Nitride- and AlInGaP-Based Quantum-Well Micro-LEDs

The efficiency of micro-light-emitting diodes (μ-LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indium phosphide (AlGaInP)-based red μ-LEDs is much lower...

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Bibliographic Details
Published in:Processes 2022-03, Vol.10 (3), p.489
Main Authors: Ho, Cheng-Han, Chen, Shih-Min, Wu, Yuh-Renn
Format: Article
Language:English
Subjects:
Aluminum
Aluminum gallium indium phosphides
Efficiency
Gallium
Gallium indium phosphide
Indium
Influence
Light emitting diodes
Limiting factors
Localization
Nitrides
Quantum efficiency
Quantum wells
Recombination
Simulation
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Summary:The efficiency of micro-light-emitting diodes (μ-LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indium phosphide (AlGaInP)-based red μ-LEDs is much lower than that of nitride-based μ-LEDs. To establish the major reasons giving rise to this huge IQE discrepancy, we examined the limiting factors in the two structures. For the nitride-based InGaN quantum wells, the influences of random alloy fluctuations were examined. A two-dimensional Poisson and drift-diffusion solver was applied to analyze these issues.
ISSN:2227-9717
2227-9717
DOI:10.3390/pr10030489