A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET

A steep-slope phenomenon is experimentally demonstrated and analyzed with a novel FET referred to as a charge pump FET (CP-FET) by using transient switching of the floating gate voltage. It is also analytically modeled and verified by simulation. The CP-FET, which is very similar to a flash memory c...

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Bibliographic Details
Published in:IEEE electron device letters 2022-04, Vol.43 (4), p.521-524
Main Authors: Kim, Myung-Su, Yun, Gyeong-Jun, Kim, Wu-Kang, Seo, Myungsoo, Kim, Da-Jin, Yu, Ji-Man, Han, Joon-Kyu, Hur, Jae, Lee, Geon-Beom, Kim, Seong-Yeon, Yun, Dae-Hwan, Choi, Yang-Kyu
Format: Article
Language:English
Subjects:
Capacitance
charge pump FET
Charge pumps
control gate
Electric potential
Flash memory (computers)
floating gate
Logic gates
Memory devices
MOSFET
MOSFETs
Nonvolatile memory
Pumping
steep-slope
Switches
Switching
Transient analysis
Transient switching
transition layer
Transition layers
Voltage
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Summary:A steep-slope phenomenon is experimentally demonstrated and analyzed with a novel FET referred to as a charge pump FET (CP-FET) by using transient switching of the floating gate voltage. It is also analytically modeled and verified by simulation. The CP-FET, which is very similar to a flash memory cell structure composed of a floating gate, was fabricated with 100 % CMOS microfabrication. The transition layer in the CP-FET is analogous to a blocking oxide in a floating gate memory device. Transient switching of the floating gate voltage is achieved by two factors. One is capacitance mismatching between a control gate and the floating gate, which is realized by designing the area of the transition layer to be smaller than that of the floating gate. The other is charge pumping to the floating gate by use of the current flowing through the transition layer.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3151077